New high-power PIN diode switches utilise GaN semiconductor technology

New high-Power PIN diode switches utilise GaN Semiconductor technology

Pasternack has released a new series of high-power RF and microwave PIN diode coaxial packaged switches perfect for commercial and defence radar, jamming systems, medical imaging, communications and electronic defence.

The company’s new high-power RF and microwave PIN diode switches use GaN semiconductor technology. GaN and chip and wire technology in the manufacturing process assure state-of-the-art power performance with an exceptional power-to-volume ratio perfect for broadband high-power applications. These PIN diode switches provide excellent thermal properties and a notably higher breakdown voltage that provides higher input power levels over broadband and narrowband RF and microwave frequencies. As these are PIN diode designs, they also provide a fast switching speed as low as <50nsec.

Other features incorporate cold switching performance up to 100W CW RF input power, broad frequency band coverage ranging from DC to 18GHz with reflective SPDT and SP4T PIN diode designs, TTL compatible driver circuitry for accurate logic control and compact coaxial packages. All units are EAR99-compliant and satisfy a series of environmental conditions for altitude, humidity, vibration and shock.

“These new GaN PIN diode switches benefit from excellent thermal properties, power to volume ratio, and higher breakdown voltage that results in state-of-the-art power handling capability in small compact packages. Furthermore, we offer these new high power PIN diode switches off-the-shelf with same-day shipping,” said Tim Galla, product line manager.

New high-power PIN diode switches utilise GaN semiconductor technology